Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 15, 1988Journal of Applied Physics

Optical and structural properties of GaAs grown on (100) Si by molecular-beam epitaxy

View Full Paper
Ask AI
Bookmark
Share

Authors

WSW. StolzPhilipps University of MarburgFGFrancisco Eduardo Gontijo GuimarãesUniversidade de São PauloKPK. PloogInstitute of Physics

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Stolz et al. (1988) studied this question.

synapsesocial.com/papers/6a6f731626770c2b8ddffe6chttps://doi.org/10.1063/1.340269
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)1984 · 251 citations
  2. 2Molecular beam epitaxy of GaAs and AlGaAs on Si1984 · 73 citations
  3. 3Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing1986 · 169 citations
  4. 4Piezo-Electroreflectance in Ge, GaAs, and Si1968 · 855 citations
  5. 5Initial stages of epitaxial growth of GaAs on (100) silicon1987 · 152 citations