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GaAs electroabsorption avalanche photodiodes in n-n+ GaAs waveguides have been used to detect the 1.06-μm radiation from a Nd : YAG laser with a responsivity of 125 A/W and an internal quantum efficiency of 23%. The response at this wavelength is due to a combination of band-to-band and defect-to-band electroabsorption.
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Nichols et al. (1977) studied this question.
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