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DLTS (Deep Level Transient Spectroscopy) measurements have been carried out to investigate the electron-trap levels in Te-doped Al x Ga 1- x Sb over a composition range from 0 to 0.4. Deep electron-traps were not detected in Te-doped n-type GaSb and AlGaSb with Al composition lower than 0.2, but a high concentration of deep electron-traps was detected at higher Al composition. Al composition in this heteroepitaxial system was accurately determined by double crystal X-ray diffraction and EPMA.
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Takeda et al. (1987) studied this question.
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