A new microscopic origin of the DX center in Al x Ga 1- x As is proposed on the basis of the scattering-theoretic method calculation. Calculated results show that the central cell potential of donors induces the deep levels attributed to the DX center. The theory satisfactorily explains the x - and pressure-dependence of the DX center energy levels in Al x Ga 1- x As.
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Eiichi Yamaguchi (1986) studied this question.
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