Answers are grounded in this paper and cite their sources.
The behavior of a Si donor in selectively doped AlAs/GaAs superlattices(SLs) grown by MBE was investigated. It was found that Si atoms doped within ± monolayer from the AlAs/GaAs interfaces of the SL act as deep centers similar to the so-called DX center observed in mixed AlGaAs, while those confined in GaAs layers act as shallow centers. The fact led us to model the DX center as a Si donor having both Al and Ga at the second nearest-neighbor sites. The model consistently explains the DX center characteristics in mixed AlGaAs.
No takes yet. Share an insight, caveat, or question.
Iwata et al. (1986) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: