Disorder of an InxGa1−xAs-GaAs superlattice by Zn diffusion

Data are presented showing that Zn diffusion into an InxGa1−xAs-GaAs superlattice (240 Å/period) completely disorders the superlattice layers, resulting in InyGa1−yAs of uniform composition. X-ray diffraction data and sputter-Auger profiles are shown, comparing the as-grown superlattice with a partially disordered (1 h, 615 °C Zn diffusion) and a totally disordered (1 h, 680 °C Zn diffusion) superlattice.