Transmission electron microscopic (TEM) observation of GaAs implanted with 100 keV Zn + ions to 10 14 ∼10 15 ions/cm 2 and annealed at 650 ∼950^° C by capless annealing in As ambient revealed precipitates, stacking-fault tetrahedra (SFTs) and stacking-fault pyramids (SFPs). The precipitates, distributed from near R p to greater depths, consisted of non-crystalline material of mean inner potential smaller than that of GaAs. Defects showing black-white contrast were found to be SFTs accompanied by a precipitate or SFPs. Two types of SFTs can be differentiated by the core structure of their stair-rod dislocations. Most of the SFTs observed were identified as β-SFTs, and very few SFPs were observed.
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Morita et al. (1985) studied this question.
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