Nitrogen implantation in GaAs1−xPx. II. Annealing properties

Efficient photoluminescence has been obtained from GaAs1−xPx implanted with N at room temperature. With appropriate annealing, emission intensities comparable with conventionally doped material are realized for N-implanted GaAs1−xPx crystals of both direct- and indirect-band-gap compositions. Anneal temperatures of at least 950 °C with dielectric encapsulation are necessary to incorporate the implanted N on optically active sites, although much of the implantation-induced lattice disorder is removed by annealing to 700 °C. Anneal characteristics are investigated by both isochronal and isothermal anneals, and comparison is made between room-temperature and hot implantations. Effects of damage introduced by optically inactive implanted Ne are compared to results for implanted N. The effects of annealing in the presence of arsenic and gallium vapor are studied, and depth profiles of lattice damage and optically active N are obtained.