The photoconductivity spectrum of electron and neutron irradiated n lightly doped GaAs

The spectral photoconductivity spectrum of lightly doped n GaAs exposed to electron and neutron irradiation is studied. From the temperature dependence of the photoconductivity, it is deduced that neutron irradiation induces a shallow donor level; photoluminescence experiments suggest that its energy lies 31 meV below the conduction band. Electron irradiation is about factor of 10 more effective than the neutron irradiation in reducing the ratio PC(17)/PC