The shift of the apparent energy gap, the Burstein-Moss shift, of degenerate indium phosphide has been measured by means of the electroreflectance method as a function of the doping concentration. Much attention has been paid to analyzing the electroreflectance spectra broadened due to band population, and the E₀ and E₀+Δ₀ critical points are determined by an extended three-point method. The effects of doping on the electroreflectance spectrum are considered. The results for the Burstein-Moss shift in InP are compared with the results for a similar material, GaAs, and the deviation of the experimental results from those calculated is discussed.
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Jukka A. Lahtinen (1986) studied this question.
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