The effect of plasma enhancement on the chemical vapor deposition of YBa 2 Cu 3 O x thin films is investigated using optical emission spectroscopy. Emission due to π * excitation of organometallic complexes is observed at 316 nm. On the other hand, emission due to oxygen atoms or ions is not observed. High oxygen pressure and coexistence of Ar gas are thought to be the reason for this result. The intensity of emission due to organometallic complexes increases as the microwave power increases. Since the crystallinity of the grown films is improved with increasing microwave power, excitation of organometallic complexes is thought to have an effect on enhancing crystallization.
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Sugii et al. (1991) studied this question.
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