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February 1, 1984Journal of Applied Physics

Aging characteristics of 1.65-μm InGaAs/InP buried heterostructure lasers grown by molecular-beam and liquid phase epitaxy

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Authors

HAH. AsahiThe University of OsakaMFM. FukudaNTT (Japan)YKYuichi KawamuraOsaka Prefecture University

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Asahi et al. (1984) studied this question.

synapsesocial.com/papers/6a6fbbd92163a0a01bc40026https://doi.org/10.1063/1.333110
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