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GaAs/Al/sub 0.3/Ga/sub 0.7/As short wavelength metal-semiconductor-metal photodetectors (MSM-PDs), compatible with GaAs heterostructure MESFET technologies have been fabricated. Detector bandwidths greater than 3.5 GHz were observed for lambda =800-850 nm. Due to the GaAs/AlGaAs heterojunction, low-frequency gain which is observed in GaAs MSM-PDs was minimized. The internal quantum efficiency was close to 100% and the dark currents were less than 1 nA for large-area detectors.>
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J. H. Burroughes (1991) studied this question.
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