Silicon doping in InP grown by molecular beam epitaxy

Silicon-doped InP layers were grown on (100) InP substrates by molecular beam epitaxy (MBE), and compared with MBE grown Sn-doped InP layers. Room-temperature electron concentrations up to ∼1×1019 cm−3 were successfully achieved with good doping controllability. The electrical optical properties of Si-doped InP layers were comparable with those of Sn-doped InP layers. These results show that Si is a useful n-type dopant in MBE growth of InP layers, especially to obtain abrupt doping profiles.