High-speed operation of InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxy

We report the millimeter-wave performance of enhancement mode InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxy. For a gate length of 1 μm we have measured a current gain cutoff frequency of 29 GHz and an electron velocity of 2.5×107 cm/s, close to a theoretical current gain cutoff frequency of 40 GHz. This represents the fastest InP-based field-effect transistor ever demonstrated, and surpasses state-of-the-art AlGaAs/GaAs modulation-doped field-effect transistors having similar gate length.