Efficient Ga1−xAlxAs light-emitting diodes with zinc-diffused junctions have been fabricated. External quantum efficiencies as high as 14% for near-infrared diodes (8150 Å) and 4% for visible red diodes (6950 Å) have been achieved at 25°C. The high efficiencies result from using a hemispherically shaped emitter with a composition profile which reduces internal bulk absorption.
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Dierschke et al. (1971) studied this question.
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