An embedded heterostructure laser and vertical JFET are integrated in a vertical configuration employing Zn diffusion and a selective liquid phase epitaxy method. The vertical JFET shares the current path with the laser, and can handle high power to effectively control the light output of the laser. Gate-voltage-controlled laser light output characteristics are demonstrated, and when V DS =4.3 V, the modulation depth of the laser output is as large as 98% for the gate voltage of -4 V.
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Yoo et al. (1988) studied this question.
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