5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Compositional dependence of band-gap energy and conduction-band effective mass of In1−<i>x</i>−<i>y</i>Ga<i>x</i>Al<i>y</i>As lattice matched to InP1982 · 186 citations
2. 2Optically pumped 1.55-μm double heterostructure Ga<i>x</i>Al<i>y</i>In1−<i>x</i>−<i>y</i>As/Al<i>u</i>In1−<i>u</i>As lasers grown by molecular beam epitaxy1983 · 38 citations
3. 3Molecular-beam epitaxially grown 1.3 μm GaInAsP/InP double-heterostructure lasers1982 · 10 citations
4. 4Interband magnetoabsorption of In_{0.53}Ga_{0.47}As1980 · 116 citations
5. 5Structure-dependent threshold current density in InGaAsP quantum well lasers1983 · 17 citations