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July 15, 1976Applied Physics LettersOpen Access

High-efficiency ion-implanted lo-hi-lo GaAs IMPATT diodes

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Authors

CBC. O. BozlerMIT Lincoln LaboratoryJDJ.P. DonnellyNorthwell HealthRMR.A. MurphyUniversity College Cork

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Bozler et al. (1976) studied this question.

synapsesocial.com/papers/6a6fbe3f31a3df82432811d2https://doi.org/10.1063/1.88965
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1C.W. operation of ion-implanted GaAs read-type IMPATT diodes1974 · 10 citations
  2. 2Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °C1975 · 88 citations
  3. 3High-efficiency GaAs lo-hi-lo IMPATT devices by liquid phase epitaxy for X band1974 · 43 citations
  4. 4Theoretical and experimental study of GaAs IMPATT oscillator efficiency1973 · 69 citations
  5. 5Ge-doped p-type epitaxial GaAs for microwave device application1973 · 8 citations