Recent advances in ultrahigh-speed HEMT LSI technology

The current status of, and recent advances in, high electron mobility transistor (HEMT) technology for high-performance submicrometer VLSI are presented with a focus on materials, self-aligned device fabrication, and HEMT LSI implementation. The HEMT is a very promising device for ultrahigh-speed LSI/VLSI applications because of the high-mobility GaAs/AlGaAs heterojunction structure. The authors project an optimized chip delay of 40 ps at 10 K-gate VLSI at room temperature.>