A Hammerstein–Wiener Model for Single-Electron Transistors

This paper proposes a new dynamic behavior model for single-electron transistors (SETs). A comprehensive review of modeling techniques and previous models was carried out aiming to remark the originality of the new proposed technique. Once established that SET is a nonlinear system, five classes of nonlinear models were simulated and compared to each other. Characteristic SET curves obtained using Simulation of Nanostructures were used as benchmark. The mean squared error (mse) was used as metric, and the simulation time was computed for each model. Regarding these two criteria—least mse and least simulation time—the Hammerstein–Wiener model outperformed the others models.