Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE

The absorption spectrum induced by applying an electric field was measured for GaInAsP/InP MQW structures with the corresponding bandgap wavelength λ g ∼1.3 µm. A 25-pairs MQW wafer was grown by LPE technique with a well width L z =150 Å, and a barrier width L b =200 Å. The maximum electro-absorption in this waveguide structure was observed to be 550 cm -1 at an applied voltage of 25 V. From this value, the refractive index variation in the quantum well layer was estimated as 0.27%.