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InGaAsP/InP luminescent diodes with modulation bandwidths from 450 MHz to 1.2 GHz at 1.27-µm wavelength can be realized as heterojunction structures with a strongly Mg-doped active region. The inflaence of Mg content in the melt and active layer width on cutoff frequency, total light output power, and power-bandwidth product is investigated. Using previous theoretical results, the relative acceptor concentration of the Mg-doped InGaAsP layers is evaluated from the measured bandwidth of the devices. Absolute values are obtained from Hall measurements.
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Grothe et al. (1981) studied this question.
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