Recombination transitions in Zn–N-doped GaAs1−xPx in the direct and indirect composition regions

The behavior of the Zn acceptor in conjunction with the N isoelectronic trap in GaAs1−xPx is studied. The photoluminescence spectra of GaAs1−xPx : N : Zn, doped p type by dilute Zn diffusion, are shifted to lower energy by an amount EZn≃30 meV (x < xc≃0.46, 77°K) for recombination transitions involving the Γ band edge, the A line, or NN pairs. For transitions involving the A line or NN pairs and crystal composition beyond the direct-indirect transition (x > xc), the spectral shift due to the Zn acceptor weakens with increasing x, which is in accord with the relative weakening of k = 0 recombination components as EΓ increases relative to Eχ. Photopumped laser operation of GaAs1−xPx : N : Zn (x < 0.46) platelets is demonstrated on Zn–N transitions. No effect is observed attributable to Zn–N complexes.