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January 1, 1966IEEE Transactions on Electron Devices

Negative resistance in p-n junctions under avalanche breakdown conditions, part I

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TMT. MisawaNokia (United States)

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T. Misawa (1966) studied this question.

synapsesocial.com/papers/6a709f9bfebe604dd7096578https://doi.org/10.1109/t-ed.1966.15647
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  1. 1Negative Resistance Arising from Transit Time in Semiconductor Diodes1954 · 221 citations
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