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Disordering in Si implanted GaAs/AlGaAs superlattices is studied by secondary ion mass spectrometry. Samples implanted with 160 keV Si + at doses 3×10 13 to 3×10 15 cm -2 are examined before and after 1 h annealing with an SiO 2 cap. Dual implantation of 160 keV and 40 keV Si + is also examined. The results indicate that the disordering of the surface region can be controlled by the concentration balance of implantation-induced defects and Si.
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Matsui et al. (1987) studied this question.
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