Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 21, 1986Applied Physics Letters

Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering

View Full Paper
Ask AI
Bookmark
Share

Authors

RTR. L. ThorntonFlorida State UniversityRBR. D. BurnhamLoyola University Medical CenterTPT. L. PaoliPalo Alto Research Center

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Thornton et al. (1986) studied this question.

synapsesocial.com/papers/6a70d8e626a7f98052dd4f70https://doi.org/10.1063/1.97201
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Low threshold planar buried heterostructure lasers fabricated by impurity-induced disordering1985 · 73 citations
  2. 2Stripe-geometry AlxGa1−xAs-GaAs quantum well heterostructure lasers defined by Si diffusion and disordering1985 · 60 citations
  3. 3Disordering of Ga1−xAlxAs-GaAs quantum well structures by donor sulfur diffusion1985 · 63 citations
  4. 4Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers1982 · 62 citations
  5. 5Disorder of an AlAs-GaAs superlattice by impurity diffusion1981 · 599 citations