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May 20, 1991Applied Physics Letters

AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy

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Authors

CWC. A. WangMIT Lincoln LaboratoryJWJ. N. WalpoleMIT Lincoln LaboratoryLML.J. MissaggiaMIT Lincoln Laboratory

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Wang et al. (1991) studied this question.

synapsesocial.com/papers/6a70d94fa528af2d65c3c714https://doi.org/10.1063/1.104928
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  4. 4Gain characteristics of strained quantum well lasers1990 · 77 citations
  5. 5Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers1986 · 81 citations