Photoluminescence measurements are used to study the cause of abnormal interface phenomena, such as non-ohmic behavior or a dip in the carrier concentration profile observed at the interface between a GaAs vapor epitaxial layer and its substrate. From measurements taken on epitaxial crystals grown at different conditions, the emission band which was supposed to be caused by copper impurities are observed at the interface. Therefore these abnormal interface phenomena are probably associated with copper impurities.
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Nakashima et al. (1970) studied this question.
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