What question did this study set out to answer?

To determine the energy levels, carrier mobilities, and charge state capture probabilities of silver impurities in bulk silicon.

January 1, 1970Journal of Applied Physics

Electronic Properties of Silicon Doped with Silver

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Authors

FTFrank ThielCorning (United States)SGS. K. GhandhiGeneral Electric (United States)

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Implication

Experimental study reveals donor and acceptor energy levels and carrier capture dynamics in silver-doped bulk silicon, clarifying impurity charge states for semiconductor physics.

Key Points

To determine the energy levels, carrier mobilities, and charge state capture probabilities of silver impurities in bulk silicon.
Measured the donor and acceptor energy levels of silver charge states relative to the silicon valence and conduction band edges.
Assessed carrier mobilities under high silver concentrations and measured charge state capture probabilities compared to gold in silicon.
Identified a singly ionizable donor level located 0.26 eV above the valence band edge.
Identified a singly ionizable acceptor level located 0.29 eV below the conduction band edge, differing from previously published values.
Determined carrier mobility impacts at high silver concentrations and quantified capture probabilities across silver charge states.

Cite This Study

Thiel et al. (1970) studied this question.

synapsesocial.com/papers/6a70ff12a7fbea1e4408469e https://doi.org/10.1063/1.1658331

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Implication

Experimental study reveals donor and acceptor energy levels and carrier capture dynamics in silver-doped bulk silicon, clarifying impurity charge states for semiconductor physics.

Electronic Properties of Silicon Doped with Silver

Discussion

Member takes

Implication

Key Points

Cite This Study

Electronic Properties of Silicon Doped with Silver

Discussion

Member takes

Implication

Key Points

Cite This Study

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