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Bipolar transistor structures can be used, instead of conventional p-n (p-i-n) junctions, to realize high-speed optical modulators and switches, which are operated by free-carrier injection. Some basic results obtained by the theoretical analysis of the structure applied to a DH X crossing are presented, with emphasis on the switching speed. It is shown that switching times can be as fast as 60 ps for the required ON-OFF optical switching, which is considerably faster than those expected for a diode structure.
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Tada et al. (1986) studied this question.
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