Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 15, 2008Applied Physics Express

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

View Full Paper
Ask AI
Bookmark
Share

Authors

MKMasahito KodamaToyota Motor Corporation (Switzerland)MSM. SugimotoTokyo Medical UniversityEHEiko HayashiToyota Motor Corporation (Switzerland)

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Kodama et al. (2008) studied this question.

synapsesocial.com/papers/6a714ec28031ec7bb1dce288https://doi.org/10.1143/apex.1.021104
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm<sup>2</sup>/(V s) Channel Mobility2007 · 94 citations
  2. 2Recessed-gate enhancement-mode GaN HEMT with high threshold voltage2005 · 259 citations
  3. 3High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment2005 · 667 citations
  4. 4High-voltage normally off GaN MOSFETs on sapphire substrates2004 · 161 citations
  5. 5High On/Off Ratio in Enhancement-Mode Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact2006 · 30 citations