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We report the first spectroscopic ellipsometry study of the E0, E0+Δ0, E1, and E1+Δ1 critical points in high-quality ZnSe films. These data seem to be the best identification of E1 and E1+Δ1 peaks to date using ellipsometry. We also describe a chemical etching procedure which was successfully used to remove the natural surface oxide overlayer on the ZnSe films. X-ray photoelectron spectroscopy data after NH4OH treatment shows the disappearance of oxygen and oxidized Se peaks demonstrating the successful removal of surface oxide overlayer on ZnSe.
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Kim et al. (1993) studied this question.
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