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Interfacial reactions in Al-alloy/Ti/borophosphosilicate glass (BPSG)/Si-substrate structures have been investigated up to the annealing temperature of 550° C. The interfacial reaction changes according to the annealing temperature. Below 500° C, a reaction between Al alloy and Ti occurs, and the main reaction product is Al 3 Ti. The underlying BPSG film remains almost inert. At 550° C, the substrate BPSG film is no longer inert and a reaction between Al alloy, Ti and underlying BPSG film takes place. The reaction never occurs without the Ti layer. Reactions in the Al-Ti-Si-O four-component system must be considered in this temperature range. The main reaction product is Ti 7 Al 5 Si 12 . After the Ti layer is consumed for Al 3 Ti formation, Al 3 Ti and BPSG react to form Ti 7 Al 5 Si 12 , and a lot of Al moves into BPSG film through the Ti 7 Al 5 Si 12 . Reaction retardation by alloying Al with Si also occurs in this temperature range.
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Onoda et al. (1995) studied this question.
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