The metallization systems Al/Ti (and Si/Al/Ti) were studied as contact metallurgies applied to N + silicon with contact size around 1 μm 2 and junction depth as shallow as 0.1 μm. Electrical test results show that contact resistivity is much lower than that provided by contact metallurgy, ranging from low 10 −6 to middle 10 −7 Ω‐cm 2 depending on the surface dopant concentration. Junction leakage is extremely low and does not show significant degradation after 5 hr annealing at 400°C or 30 min annealing at 450°C. Contact resistance of 15 Ω per contact has been achieved on 1 μm 2 siz e contacts.
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Ting et al. (1982) studied this question.