A Novel Bias Temperature Instability Characterization Methodology for High-knMOSFETs

The power law dependence of the threshold voltage shift (DeltaVth) on stress time for high-k nMOSFETs is studied using a single-pulse Id-Vgtechnique. The power law exponent value is found to be strongly affected by fast transient charge detrapping during the stress interruption time, which may result in an inaccurate lifetime prediction. A new analysis method that eliminates the impact of the stress interruption time is proposed to evaluate bias temperature instability in n-type high-k devices