A generalized method of DC and high-frequency analysis for microwave transit time diodes in mixed tunnelling and avalanche mode, which can be applied to any type of diode structure is reported. Taking a purely field-dependent tunnel generation rate for electrons, the same is computed for holes from a simulated energy band diagram within the depletion layer of the diode. The method has been applied to a variety of Si, GaAs and InP diode structures. The results show a substantial degradation of IMPATT properties due to phase distortion caused by the tunnelling current.
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Dash et al. (1992) studied this question.
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