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Pulsed operation of Si avalanche diodes in an oscillator circuit has produced efficiencies exceeding 45 percent at frequencies of 2.0 to 3.0 GHz, and 17 percent at 6.4 GHz. The device has a lightly punched-through structure working in a coaxial cavity, which can support both the fundamental IMPATT and its subharmonic frequencies.
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Ying et al. (1969) studied this question.
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