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August 3, 1998Applied Physics Letters

Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition

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Authors

CSC. K. ShuMackay Memorial HospitalJOJehn OuNational Yang Ming Chiao Tung UniversityHLHaojian LinSouth China Normal University

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Cite This Study

Shu et al. (1998) studied this question.

synapsesocial.com/papers/6a72b8e3abc331a85807c0b1https://doi.org/10.1063/1.121933
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