Interaction between dislocations and In in In-doped GaAs single crystals under high-temperature plastic deformation

The interaction between dislocations and indium has been studied in In-doped GaAs under high-temperature plastic deformation. This interaction is revealed by yield drops in the stress-strain curves after stress relaxations, and by serrated yielding (the Portevin-Le Chatelier effect). Static ageing can be shown to be due to elastic interactions, in agreement with the model recently proposed by Ehrenreich and Hirth (1986).