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A new operation scheme on oxide-based resistive-switching devices [resistive random access memory (RRAM)] is proposed to improve the controllability of switching processes in order to achieve an improved memory performance. The improved device-to-device and cycle-to-cycle uniformity, reduced RESET current, and adjustable RHRS/RLRSratio are demonstrated in the HfOx-based RRAM devices by using the new operation scheme, indicating the validity of the new operation scheme. The physical mechanism accounting for the new operation scheme effect is discussed.
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Chen et al. (2011) studied this question.
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