Study of Impedance Spectra of Planar Structures [(CoFeB + SiO2)/ZnO]50/Sitall in the Frequency Range 1 Hz−1 MHz and in the Temperature Range 120−420 K

The paper studies the temperature and frequency dependences of the real and imaginary components of the impedance of [(CoFeB + SiO2)/ZnO]50 multilayer films on sitall plates in the frequency range from 1 Hz to 1 MHz and in the temperature range from 120 to 420 K. Based on the measured specific surface electrical resistance, the multilayer films under study are divided into three groups with different types of conductivity: low, medium, and high. It is shown that at low frequencies up to 100 Hz and at temperatures above 260 K, the temperature behavior of the real part of the impedance of the planar structure multilayer film/sitall glass-ceramic is determined mainly by the behavior of the sitall plate. At high frequencies, starting from 1 kHz, the temperature behavior of the structure impedance in the entire studied temperature range of 120–420 K has the greatest difference; the higher the frequency and the lower the temperature, the greater these differences. For the planar structure multilayer film/sitall with a low composite layer conductivity, a decrease in the imaginary component of the impedance is observed with increasing temperature at frequencies above 10 kHz. An equivalent electrical circuit for the planar structure multilayer film/sitall is proposed. For effective control of the conductive and frequency properties of the planar structure multilayer film/sitall using alternating electric fields, it is proposed to use multilayer films with low conductivity.