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November 1, 1981Journal of Applied PhysicsOpen Access

Effects of rf power and reactant gas pressure on plasma deposited amorphous hydrogenated silicon

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Authors

JPJ. E. PottsNorthwestern UniversityEPE. M. PetersonWashington University in St. LouisJMJ. A. McMillanUniversity of Glasgow

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Potts et al. (1981) studied this question.

synapsesocial.com/papers/6a734fbc30bc69be694e5383https://doi.org/10.1063/1.328616
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  5. 5Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon1978 · 316 citations