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GaAs-Si low temperature bonding has been achieved using spin-on-glass as the intermediate layer. Interface energies of ~1.7 J/m2 were obtained after thermal annealing at only 200°C. The interface energy is sufficiently high to allow thinning of the GaAs wafer down to 5–10 µm.
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Alexe et al. (2000) studied this question.
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