Recent studies have produced 0.1 × 0.1 μm ferroelectric cells in both bismuth titanate and strontium bismuth tantalate, thus taking thin-film ferroelectric memories into the regime of nanoscale (100 nm or less) devices. A review is presented of deposition, switching, and leakage current in these devices, which are small enough to permit 1 Gbit memories on a standard Si chip.
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Scott et al. (1998) studied this question.
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