Electron Paramagnetic Resonance of Ion-Implanted Donors in Silicon

The EPR of As75, Sb121, and Sb123 substitutional donors implanted in silicon have been observed. The Si-P3 and Si-P1 center resonances associated with the damage were also observed. Samples were implanted at room temperature to fluences of ∼ 1013 ions/cm2, and the EPR spectra associated with the damage and the implanted impurities were monitored as the samples were isochronally annealed to 970 °C. The spectra of the implanted donors were observed after the 400 °C anneal with illumination and following the 600 °C anneal without illumination. After the anneal at ∼ 900 °C, the proportion of implanted antimony that is observed by EPR to be substitutional is significantly larger than for the implanted arsenic.