Monolithically integrated full-wave bridge rectifier based on NiO/β-Ga2O3 heterojunction diodes for high-frequency AC–DC conversion

In this study, we demonstrate a monolithically integrated full-wave bridge rectifier using NiO/β-Ga 2 O 3 heterojunction diodes (HJDs). The circuit, fabricated on a single β-Ga 2 O 3 substrate with on-chip passive components, exhibits stable AC–DC conversion under a ±10 V sinusoidal input at 10 MHz, experimentally delivering a DC output voltage of 2.35 V with a ripple voltage of 160 mV. To further improve circuit performance, a SPICE-compatible compact model of the NiO/β-Ga 2 O 3 HJD was developed and calibrated using measured diode characteristics. Based on this model, the on-chip resistance and capacitance were systematically optimized through SPICE simulation. The SPICE-optimized circuit design is predicted to provide a rectified output voltage of 7.2 V and a reduced ripple voltage of approximately 100 mV, corresponding to a simulation-predicted ∼3 × increase in output voltage and a 37.5% reduction in ripple compared with the initial design. The experimentally measured 10 MHz operation supports the feasibility of monolithically integrated NiO/β-Ga 2 O 3 HJD-based rectifiers for stable high-frequency AC–DC power conversion, while the simulation-predicted optimization results provide a practical simulation-assisted design framework for future β-Ga 2 O 3 power integrated circuits.