Integrated electron-beam lithography for 0.25 μm device fabrication

We report on the integration of the lithography related issues necessary for the successful completion of 0.25 μm silicon and GaAs device programs: system configuration and modifications, electron beam/resist interactions, resist and process control, and proximity effect correction. In addition, extended device results will be presented for both device programs. We have successfully completed fully–scaled, all electron beam 0.25 μm NMOS and PMOS runs on silicon and mixed electron beam/optical runs on GaAs. Device performance parameters show linewidth control on silicon of 0.025 μm (3σ). GaAs devices with 0.15 μm gates and 0.25 μm ring oscillators with delays less than 17 ps/stage have been fabricated.