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A new MOSFET substrate current model, incorporating energy transport, is proposed. It was found that a non-steady-state electron transport effect and two effects attributed to electron pressure are essential to calculate the substrate current characteristics accurately. The predictions from the present model compare favorably with the experimental data for MOSFET's with effective channel length down to 0.45 µm.
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Fukuma et al. (1987) studied this question.
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