Enhanced Photodetector Performance of Nanostructured MoO3-x Thin Films by Inert Annealing

In this research work, the effect of annealing temperature on the performance of molybdenum trioxide (MoO3)-based metal–semiconductor–metal (MSM) planar-structured ultraviolet (UV) photodetector is studied. The MoO_3-xthin films are grown at 5.0% of oxygen partial pressure onto the SiO2/Si substrate through the sputtering technique. Later, the as-deposited thin films are inertly annealed at 150 °C, 250 °C, and 350 °C in the ambience of inert gas (Ar). From the field emission scanning electron microscopy (FESEM) image, the prominent formation of nanorod-based morphology is observed for the sample annealed at 350 °C and it can increase the surface-area-to-volume ratio of the sample, which helps it to produce more number of charge carriers and causes to increase the photocurrent of the device. The current–voltage (I–V) characteristics of the Ag/MoO_3 -x/Ag-based test devices depict the ohmic contact in the Ag-MoO_3 -xinterface. The sample annealed at 350 °C shows a high photocurrent of21.21 μ A, a fast response time of 60 ms, and a high responsivity of 2.905 A/W. Finally, this research work could provide a platform for the advancement of superior photodetectors in optoelectronics devices.